Copyright(2018)TheJapanSocietyofAppliedPhysics.Jpn. J. Appl. Phys. 57 01AB06 (2018)Copyright(2012)TheJapanSocietyofAppliedPhysics.Jpn. J. Appl. Phys. 51 01AC05 (2012)H(Incident atoms )H(Others)Contrib. Plasma Phys., 2020;e201900152.(c)J. Appl. Phys. 107 123306 (2010)H(Others)H(Incident atoms )forPlasmaProcessing■■Molecular Simulation■■MolecularSimulationNon-contact resistance measurementProduction of positive & negative ionWettabilitycontrolfor Nuclear Fusion Deviceof Plasma Irradiation■■Experiments47IllustrationElectrostatic drift forceProvidedbyNationalInstituteforFusionScienceEvaluation of semiconductorsEvaluation of insulatorsPowder handlingsPhoto of wall in Fusion device: LHD320 ÅinvestigationofExampleofthebubblestructuregrowsonatungstenwallexposedtoheliumplasmausingmolecularsimulation.Filmformationofamorphouscarbonbymoleculardynamicssimulation.Theanisotropyofatomicbondswasinvestigatedinatomicscale.Depositionprocessofamorphouscarbonfilm0.011.77.8Fluence [Å-2]ExampleoftheinvestigationofrecyclingprocessofhydrogenmoleculesreleasedfromthecarbonwallLHDbymoleculardynamicssimulation.(a)Atomic process of emission (b)Emission-angle distribution(c)Translational-energy (d) Vibrational-level distribution (e) Rotational-level distributionindistribution(b)(d)(e)Plasmairradiationexperimentsisperformedbyandatmosphericvacuumplasmaequipment.Experimentalisdatacomparedwithofmolecularsimulation.pressuretheplasmaresultFast & zero level charge eliminationEvaluation of coatingsRollcleanersWide jet nozzle(a)19.5Content：ContentThecomplexphysicalphenomenacausedontheinteractionbetweenplasmaandmaterialsareinvestigated. The complex physical phenomena caused on the interaction between plasma and materials are investigated.Technologiesthatutilizetheinteractionbetweenplasmaand Technologies that utilize the interaction between plasma materialspreadswidelyinourlives.Forexample,plasmaprocessingand material spreads widely in our lives. For example, plasma technologyisemployedforthefabricationofsemiconductorandthinprocessing technology is employed for the fabrication of filmthatsupporttheinformationtechnology.Theplasma-materialsemiconductor and thin film that support the information interactionisalsooneofthekeyissueforrealizationofnucleartechnology. The plasma-material interaction is also one of fusionpowerplantwhichconfineshigh-temperatureplasmaof100the key issue for realization of nuclear fusion power plant milliondegreesCelsiuswithmagneticfieldorinertialforce.which confines high-temperature plasma of 100 million Variousaboveinteractionmentioneddegrees Celsius with magnetic field or inertial force.investigatedbycomparingmolecular Various plasma-material interaction mentioned above is experiments,inourlab.investigated by comparing molecular simulation with plasma experiments, in our lab.Appealingpoint：WecanprovideknowledgetounderstandmacroscalephenomenaSpecial objectivesrelatedtoplasma-materialinteractionfromtheatomicscalebylarge-scalemoleculardynamicssimulationsusingsupercomputers. We can provide knowledge to understand macroscale phenomena related to plasma-material interaction from the atomic scale by large-scale molecular dynamics simulations using supercomputers.Yamagata UniversityGraduate School of Science and Engineering Research Interest ：Plasma-material interactionYamagata University Graduate School of Science and Engineering E-mail ：saitos@yz.yamagata-u.ac.jpResearch InterestPlasma-material interactionTel ：+81-238-26-3334Fax：+81-238-26-3299E-mail ・ saitos@yz.yamagata-u.ac.jpTel ・ +81-238-26-3334Fax ・ +81-238-26-3299HP ：http://saitos-lab.yz.yamagata-u.ac.jp/HP・http://saitos-lab.yz.yamagata-u.ac.jp/plasma-materialPlease put your photograph. issimulationwithplasmaContent：ContentNew techniques are produced by an electrostatic charge control such as follows. New techniques are produced by an electrostatic charge control such as follows.〇Non-contact resistance measurement〇Non-contact resistance measurement→ Evaluating coating thickness, curing state, deterioration status. → Evaluating coating thickness, curing state, deterioration → Evaluating semiconductor dopant, pollution level of insulators. status.〇Electrostatic particle feeders → Evaluating semiconductor dopant, pollution level of insulators.→ Feed control of tiny amount of powders.〇Electrostatic particle feeders〇Electrostatic roll cleaners → Feed control of tiny amount of powders.→ Dust removal using electrostatic force without adhesive material.〇Electrostatic roll cleaners〇Electrostatic wide jet nozzle → Dust removal using electrostatic force without adhesive material.→ Atomization of liquid and 100 % deposition by electrostatic force.〇Electrostatic wide jet nozzle〇High performance ionizer → Atomization of liquid and 100 % deposition by electrostatic → Fast and zero-level neutralization, low cost charge elimination. force.〇High performance ionizer → Fast and zero-level neutralization, low cost charge Appealing point： elimination.Idea of above techniques are came from industrial needs then our original control are added. The industrial needs are my drive force Special objectivesto create new technique. Idea of above techniques are came from industrial needs then our original control are added. The industrial needs are Yamagata UniversityGraduate School of Science and Engineering my drive force to create new technique.Research Interest ：Electrostatic applicationYamagata University Graduate School of Science and Engineering E-mail ：toshi@yz.yamagata-u.ac.jpResearch InterestTel ：+81-238-26-3280Electrostatic applicationFax：+81-238-26-3280E-mail ・ toshi@yz.yamagata-u.ac.jpTel ・ +81-238-26-3280HP ：https://toshi677.wixsite.com/mysiteFax ・ +81-238-26-3280HP・https://toshi677.wixsite.com/mysiteElectrostatic Charge controlAssociate ProfessorSeiki SaitoMolecular Simulation of Plasma-Material InteractionMolecular Simulation of Plasma-Material InteractionMeasuring, manipulating, adhering method by an electrostatic charge controlMeasuring, manipulating, adhering method by an electrostatic charge controlAssociate professor Toshiyuki SugimotoAssociate professor Toshiyuki SugimotoAssociate Professor Seiki Saito
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